说明:GaSb 1 νm-thick layers were grown by molecular beam epitaxy on GaAs (0 0 1). The effects of the growth conditions on the crystalline quality, surface morphology, electrical properties and optical properties were studied by double crystalline x-ray di <weixin_38624556> 上传 | 大小:618kb
说明:Alumina-rich spinel is a new substrate for fabricating high-quality GaN-based light-emitting diodes. 1:3 spinel crystals (1 MgO for 3Al(2)O(3)) with dimension of diameter 36 mm x 55 mm have been grown by the Czochralski method. The crystal structure <weixin_38623819> 上传 | 大小:387kb