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  1. 4N29光电耦合datasheet(motorola)

  2. SEMICONDUCTOR TECHNICAL DATA The 4N29/A, 4N30, 4N31, 4N32(1) and 4N33(1) devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon photodarlington detector.
  3. 所属分类:其它

    • 发布日期:2010-03-09
    • 文件大小:287kb
    • 提供者:bernin