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  1. Ge-on-Si modulators operating at mid-infrared wavelengths up to 8 μm

  2. We report mid-infrared Ge-on-Si waveguide-based PIN diode modulators operating at wavelengths of 3.8 and 8?μm. Fabricated 1-mm-long electro-absorption devices exhibit a modulation depth of

  3. 所属分类：其它