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  1. Growth of strain-compensated InGaAs/GaAsP multiple quantum wells by MOVPE

  2. InGaAs/GaAsP strain-compensated multiple quantum wells (SCMQWs) and strained InGaAs/GaAs multiple quantum wells (MQWs) were grown on GaAs substrates by metal organic vapor phase epitaxy (MOVPE). The results of double crystal X-ray diffraction (DCXRD)
  3. 所属分类:其它

    • 发布日期:2021-02-11
    • 文件大小:456kb
    • 提供者:weixin_38705699