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  1. INDIUM PLM stencil technology

  2. ESM Introduction • InFORMs® Introduction • Flux Technology • Solder Fortification in Electronic Assembly

  3. 所属分类：制造

    • 发布日期：2018-03-05
    • 文件大小：12mb
    • 提供者：leelinping

  1. Python-Indium一个Emacs的JavaScript开发环境

  2. Indium一个Emacs的Javascr ipt开发环境

  3. 所属分类：其它

    • 发布日期：2019-08-10
    • 文件大小：1012kb
    • 提供者：weixin_39841365

  1. Indium, Emacs的JavaScript开发环境.zip

  2. Indium, Emacs的Javascr ipt开发环境 铟 Emacs的Javascr ipt开发环境。 铟连接到浏览器选项卡或者nodejs进程，为Javascr ipt开发提供了许多功能，包括：一个 REPL ( 自动完成) &对象检查具有历

  3. 所属分类：其它

    • 发布日期：2019-10-09
    • 文件大小：1011kb
    • 提供者：weixin_38743481

  1. Electrochemical Nucleation of Indium on vitreous carbon in sulphate bath

  2. 硫酸盐体系中铟在玻璃棒上的电化学成核机理，欧铜钢，潘勇，采用循环伏安法和计时电流法研究了铟电沉积的循环伏安特性与电结晶机理，结果表明，铟在该基体上的沉积没有经历UPD过程，铟的电沉

  3. 所属分类：其它

    • 发布日期：2020-02-19
    • 文件大小：160kb
    • 提供者：weixin_38670065

  1. Thin-film encapsulation of indium-tin-oxide-free polymer solar cells by atomic layer deposition with an improvement on s

  2. 原子层沉积薄膜封装聚合物太阳能电池，李衎，范欢欢，倒置型无ITO聚合物太阳能电池器件结构为Al/TiOx /P3HT:PC61BM /PH1000. 在制备中，原子层沉积（ALD）技术用以封装器件.氧化铝通过ALD技术沉积�

  3. 所属分类：其它

    • 发布日期：2019-12-31
    • 文件大小：703kb
    • 提供者：weixin_38721119

  1. Basic Electronics.pdf

  2. 电路学 - 基础电路里面的元器件介绍以其例子，适合新手Semiconductor - I Silicon is the most common material used to build semiconductor devices Si is the main ingredient of sand and it is estimated that a cubic mile of seawater contains 15.000 tons of si Si is spun and grown i

  3. 所属分类：硬件开发

  1. 显示/光电技术中的浅谈投射式电容触摸屏设计

  2. 摘要：投射式电容触摸屏以优越的可操作性和可靠性，逐步成为手机等电子产品的主流。文章从原理、结构等方面，简单介绍投射式电容触摸屏的设计要点。 　　1 工作原理 　　投射式电容触摸屏是在玻璃表面用一层或多层ITO（Indium Tin Oxides，透明导电薄膜，纳米铟锡金属氧化物，具有良好的导电性和透明性）制作X 轴和Y 轴电极矩阵，当手指触摸时，手指和ITO 表面形成一个耦合电容，引起电流的微弱变动，通过扫描X 轴和Y 轴电极矩阵，检测触摸点电容量的变化，计算出手指所在位置。 　　投射

  3. 所属分类：其它

    • 发布日期：2020-10-21
    • 文件大小：551kb
    • 提供者：weixin_38624628

  1. 显示/光电技术中的基于电容式触摸屏系统介绍及相关解决方案

  2. 触摸屏广泛应用于我们日常生活各个领域，如手机、媒体播放器、导航系统、数码相机、数码相机、数码相框、PDA、游戏设备、显示器、电器控制、医疗设备等等。 　　通用的触摸屏技术包括适用于移动设备和消费电子产品的电阻式触摸屏和投射电容式（projected capacitive）触摸屏以及用于其他应用的表面电容式（surface capacitive）触摸屏、表面声波（SAW）触摸屏和红外线触摸屏。 　　电阻式触摸屏 　　应用比较多的电阻式触摸屏（图1）具有空气间隙和间隔层的两层ITO（Indiu

  3. 所属分类：其它

    • 发布日期：2020-11-08
    • 文件大小：151kb
    • 提供者：weixin_38521169

  1. Preparation of Transparent Conductive Praseodymium Titanate Doped Indium Oxide Film and Its Application in Organic Opto鄄

  2. Preparation of Transparent Conductive Praseodymium Titanate Doped Indium Oxide Film and Its Application in Organic Opto鄄electronic Devices

  3. 所属分类：其它

  1. Highly efficient ultraviolet high-harmonic generation from epsilon-near-zero indium tin oxide films

  2. High-harmonic generation in the ultraviolet region is promising for wireless technology used for communications and sensing. However, small high-order nonlinear coefficients prevent us from obtaining high conversion efficiency and functional photonic

  3. 所属分类：其它

    • 发布日期：2021-03-02
    • 文件大小：989kb
    • 提供者：weixin_38665193

  1. Study on Needles and Cracks of Tin-doped Indium Oxide Tablets for Electron Beam Evaporation Process

  2. Study on Needles and Cracks of Tin-doped Indium Oxide Tablets for Electron Beam Evaporation Process

  3. 所属分类：其它

  1. Organic light-emitting device with surface-modified tungsten-doped indium oxide anode

  2. The work function phi of tungsten-doped indium oxide (IWO) thin films could be enhanced to 5.5 eV by forming platinum and tungsten codoped indium oxide (In2O3: Pt, W) thin layers on them. With the IWO/In2O3: Pt, W double-layer as the anode, an OLED d

  3. 所属分类：其它

    • 发布日期：2021-02-20
    • 文件大小：94kb
    • 提供者：weixin_38676058

  1. Annealing induced refinement on optical transmission and electrical resistivity of indium tin oxide

  2. The effect of annealing condition on sputtered indium tin oxide (ITO) films on quartz with the thickness of 200 nm is characterized to show enhanced optical transparency and optimized electrical contact resistivity. The as-deposited grown ITO film ex

  3. 所属分类：其它

  1. Application of spectroscopic ellipsometry for the study of electrical and optical properties of indium tin oxide thin fi

  2. Application of spectroscopic ellipsometry for the study of electrical and optical properties of indium tin oxide thin films

  3. 所属分类：其它

    • 发布日期：2021-02-10
    • 文件大小：554kb
    • 提供者：weixin_38721652

  1. Antistatic and antireflection coating using indium tin oxide prepared by magnetron reactive sputtering

  2. Antistatic and antireflection (ASAR) coating using indium tin oxide (ITO) by magnetron reactive sputtering (MRS) technique is presented. The relationship between sheet resistance and optical transmittance of ITO prepared by MRS is investigated, and t

  3. 所属分类：其它

    • 发布日期：2021-02-10
    • 文件大小：286kb
    • 提供者：weixin_38725902

  1. Infrared transmission characteristic of indium-tin-oxide thin films prepared by femtosecond pulsed laser deposition

  2. Infrared transmission characteristic of indium-tin-oxide thin films prepared by femtosecond pulsed laser deposition

  3. 所属分类：其它

    • 发布日期：2021-02-09
    • 文件大小：575kb
    • 提供者：weixin_38710524

  1. Influence of Indium Content on the Unintentional Background Doping and Device Performance of InGaN/GaN Multiple-Quantum-W

  2. Influence of Indium Content on the Unintentional Background Doping and Device Performance of InGaN/GaN Multiple-Quantum-Well Solar Cells

  3. 所属分类：其它

    • 发布日期：2021-02-08
    • 文件大小：348kb
    • 提供者：weixin_38672940

  1. Highly ultraviolet transparent textured indium tin oxide thin films and the application in light emitting diodes

  2. Highly ultraviolet transparent textured indium tin oxide thin films and the application in light emitting diodes

  3. 所属分类：其它

  1. Chip-scale white flip-chip light-emitting diode containing indium phosphide/zinc selenide quantum dots

  2. Chip-scale white flip-chip light-emitting diode containing indium phosphide/zinc selenide quantum dots

  3. 所属分类：其它

  1. Experimental investigation of spontaneous emission characteristics of InGaAs-based indium-rich cluster-induced special q

  2. The unamplified spontaneous emission (SE) is one of the important physical processes of the light–matter interaction in a diode laser in terms of Einstein’s theory. The recent research on a kind of new indium-rich cluster (IRC) laser structure did no

  3. 所属分类：其它

    • 发布日期：2021-01-26
    • 文件大小：626kb
    • 提供者：weixin_38589774
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