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  1. Surface-illuminated photon-trapping high-speed Ge-on-Si photodiodes with improved efficiency up to 1700 nm

  2. In this paper, high-speed surface-illuminated Ge-on-Si pin photodiodes with improved efficiency are demonstrated. With photon-trapping microhole features, the external quantum efficiency (EQE) of the Ge-on-Si pin diode is >80% at 1300 nm and 73% a

  3. 所属分类：其它