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  1. 肖特基二极管主要是肖特基二极管的他正参数

  2. 主要是肖特基二极管的他正参数，是中文的参数，供大家参考

  3. 所属分类：专业指导

    • 发布日期：2009-07-18
    • 文件大小：183kb
    • 提供者：myq889

  1. BAT54 Planar Schottky barrier diodes

  2. Planar Schottky barrier diodes encapsulated in a SOT23 small plastic SMD package. Single diodes and double diodes with different pinning are available. MARKING

  3. 所属分类：Java

    • 发布日期：2010-04-24
    • 文件大小：53kb
    • 提供者：ys7041

  1. schottky 1.00ns

  2. schottky 1.00ns

  3. 所属分类：网络监控

    • 发布日期：2011-10-10
    • 文件大小：22kb
    • 提供者：pengjian1233

  1. BAT54/A/C/S Schottky Diodes

  2. BAT54/A/C/S Schottky Diodes 数据手册

  3. 所属分类：硬件开发

    • 发布日期：2013-01-15
    • 文件大小：115kb
    • 提供者：lwangx86

  1. 电源技术中的恩智浦新型封装的MEGA Schottky整流器

  2. 恩智浦半导体（NXP）近日宣布推出全新FlatPower封装的MEGA Schottky整流器，包括SOD123W和SOD128。因为“金属板绑定”的封装成果，新的MEGA产品带来可媲美标准SMA封装的高功率性能。新产品以其卓越的前向压降，可以允许50A的峰值电流最峰和高至1W的Ptot功率耗散。 　　同时，两种封装相较SMA封装高度减小了50%，因而能够支持更加小型超薄设计。SOD123W以2.6 mm x 1.7 mm x 1 mm的小尺寸，支持这种小型化的技术趋势；SOD128的尺寸

  3. 所属分类：其它

    • 发布日期：2020-11-16
    • 文件大小：59kb
    • 提供者：weixin_38624519

  1. 使用TiO2纳米粒子的高效稳定的倒置聚合物太阳能电池，并通过Mott-Schottky电容进行分析

  2. 使用TiO2纳米粒子的高效稳定的倒置聚合物太阳能电池，并通过Mott-Schottky电容进行分析

  3. 所属分类：其它

  1. Improvements on high voltage capacity and high temperature performances of Si-based Schottky potential barrier diode

  2. Improvements on high voltage capacity and high temperature performances of Si-based Schottky potential barrier diode

  3. 所属分类：其它

  1. Electrical characterization of Cu Schottky contacts to n-type GaAsN grown on (311)A/B GaAs substrates

  2. Electrical characterization of Cu Schottky contacts to n-type GaAsN grown on (311)A/B GaAs substrates

  3. 所属分类：其它

  1. High energy electron radiation effect on Ni and Ti/4H-SiC Schottky barrier diodes at room temperature

  2. High energy electron radiation effect on Ni and Ti/4H-SiC Schottky barrier diodes at room temperature

  3. 所属分类：其它

    • 发布日期：2021-02-20
    • 文件大小：256kb
    • 提供者：weixin_38500572

  1. Investigation of ZrGe Schottky source/drain contacts for Ge p-channel MOSFETs

  2. Investigation of ZrGe Schottky source/drain contacts for Ge p-channel MOSFETs

  3. 所属分类：其它

    • 发布日期：2021-02-11
    • 文件大小：597kb
    • 提供者：weixin_38626984

  1. Barrier Inhomogeneities and Interface States of Metal/4H-SiC Schottky Contacts

  2. Barrier Inhomogeneities and Interface States of Metal/4H-SiC Schottky Contacts

  3. 所属分类：其它

    • 发布日期：2021-02-08
    • 文件大小：887kb
    • 提供者：weixin_38713009

  1. Investigation of Defect Levels of Al/Ti 4H-SiC Schottky structures by Deep Level Transient Spectroscopy

  2. Investigation of Defect Levels of Al/Ti 4H-SiC Schottky structures by Deep Level Transient Spectroscopy

  3. 所属分类：其它

    • 发布日期：2021-02-08
    • 文件大小：1005kb
    • 提供者：weixin_38653664

  1. Interface Engineering of Organic Schottky Barrier Solar Cells and Its Application in Enhancing Performances of Planar He

  2. Interface Engineering of Organic Schottky Barrier Solar Cells and Its Application in Enhancing Performances of Planar Heterojunction Solar Cells

  3. 所属分类：其它

    • 发布日期：2021-02-07
    • 文件大小：761kb
    • 提供者：weixin_38532629

  1. Multimode Signal Processor Unit Based on the Ambipolar WSe2−Cr Schottky Junction

  2. Multimode Signal Processor Unit Based on the Ambipolar WSe2−Cr Schottky Junction

  3. 所属分类：其它

  1. Improvement of reverse blocking performance in vertical power MOSFETs with Schottky-drain-connected semisuperjunctions

  2. Improvement of reverse blocking performance in vertical power MOSFETs with Schottky-drain-connected semisuperjunctions

  3. 所属分类：其它

  1. External quantum efficiency-enhanced PtSi Schottky-barrier detector utilizing plasmonic ZnO:Al nanoparticles and subwave

  2. A infrared light trapping structure combining front subwavelength gratings and rear ZnO:Al nanoparticles for a PtSi Schottky-barrier detector over a 3–5 μm waveband is theoretically investigated. By selecting the proper plasmonic material and optimiz

  3. 所属分类：其它

    • 发布日期：2021-02-07
    • 文件大小：578kb
    • 提供者：weixin_38546846

  1. Improved Schottky contacts to InGaN alloys by a photoelectrochemical treatment

  2. Improved Schottky contacts to InGaN alloys by a photoelectrochemical treatment

  3. 所属分类：其它

  1. Analyses and Experiments of the Schottky Contact Super Barrier Rectifier (SSBR)

  2. Analyses and Experiments of the Schottky Contact Super Barrier Rectifier (SSBR)

  3. 所属分类：其它

  1. Improvement of external quantum efficiency of silicide Schottky-barrier detectors in the 3 to 5 μm waveband with subwave

  2. Improvement of external quantum efficiency of silicide Schottky-barrier detectors in the 3 to 5 μm waveband with subwavelength-grating incident plane

  3. 所属分类：其它

    • 发布日期：2021-02-06
    • 文件大小：542kb
    • 提供者：weixin_38617001

  1. Fabrication of electrically contacted plasmonic Schottky nanoantennas on silicon

  2. We fabricate Schottky contact photodetectors based on electrically contacted Au nanoantennas on p-Si for the plasmonic detection of sub-bandgap photons in the optical communications wavelength range. Based on a physical model for the internal photoem

  3. 所属分类：其它

    • 发布日期：2021-01-27
    • 文件大小：667kb
    • 提供者：weixin_38606294
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