文件名称:
Study of stress in ammonothermal non-polar and semi-polar GaN crystal grown on HVPE GaN seeds
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上传时间: 2021-02-11
详细说明:GaN crystals were grown on non-polar and semi-polar HVPE GaN seeds by basic ammonothermal method. Stress distributions were investigated in cross-section of (1 1 −2 0) plane, (1 0 −1 0) plane, (2 0 −2 1) plane and (1 0 −1 1) plane GaN crystal. The cathodoluminescence (CL) images show cross-section information clearly and each examined object consisted of hydride vapor phase epitaxy (HVPE) seed and ammonothermal GaN (Am-GaN). The impurity concentration and free carrier concentration were estimate
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