DG409LE.pdfDG409LE芯片使用手册VISHAY DG408LE DG409LE www

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详细说明：DG409LE芯片使用手册VISHAY DG408LE DG409LE www.vishay.com Vishay siliconix ABSOLUTE MAXIMUM RATINGS PARAMETER LIMIT UNIT V+ to v-e 18 GND to v- -18 Digital Inputs a, Vs, Vp V-)-0.3to(+0.3 Current(any terminal) mA Peak Current, S or D(pulsed at 1 ms, 10 duty cycle max 100 Storage Temperature (D suffix) -65to+125 16-pin plastIc TSSOP C Power Dissipation (package)b 16-pin narrow SOICC 600 mW 16-pin miniOn d 1385 ESD Human Body Model (HBM); per ANSI/ESDA/JEDEC( JS-001 2500 Latch Up Current, per JESD78D 300 mA Notes a. Signals on Sx, Dx, Ax, or EN exceeding v+ or v-will be clamped by internal diodes. Limit forward diode current to maximum current ratings b. all leads soldered or welded to pc board C. Derate 8 mW/c above 75C d. Derate17.3mW/° C above70°c e. Also applies when v-= GND Stresses beyond those listed under "Absolute Maximum Ratings"may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S16-0389-RevA,07-Mar-16 Document number: 78084 Fortechnicalquestionscontactanalogswitchsupportvishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS SET FORTH AT wWW nay com/doc?91000 VISHAY DG408LE DG409LE www.vishay.com Vishay siliconix SPECIFICATIONS (Single Supply 12 V) TEST CONDITIONS D SUFFIX PARAMETER SYMBOL UNLESS OTHERWISE SPECIFIED TEMP. b TYP. d H-40C to +85C UNIT VEN=0.8 V or 2.4Vr MIN MAX C Analog Switch Analog Signal Range e ANALOG Full Drain-Source VD=10.8V, VD=2 Vor 9V, Is= 10 mA Room 17 23 On-Resistance s(oni sequence each switch or Full 27 RDS(on) Matching Between Channels g △RDs Vp=10.8 V, VD=2V or 9 v Room 3 On-Resistance flatness Is=10 mA Room 3 6.5 Room Switch Off Leakage VEn=0V, VD=11Vor 1 V Full 5 5 Current a Vs=1Vor 11V Room n Full 5 Channel On Leakage Room Current a Vs=Vp=1Vor 11V Full 5 Digital Control . ogic High Input Voltage INH Full 2.4 V Logic Low Input voltage 0.8 Current VAX= VEN=2.4V or 0.8V Full Dynamic Characteristics Vs1=8V, Vs8=0V,DG408LE Room 85 100 Transition time TRANS Vs1b=8V, Vs4b=0V, DG409LE see figure 2 Full 110 34 Break-Before-Make Time 5V Room see figure 4 Full Room 55 72 Enable turn-On Time toN(EN) VAX=0V, Vs1=5V(DG408LE) VAx =0V, Slb=5V(DG409LE Full Room Enable Turn-off Time FF(EN see figure 3 Full 50 Charge Injection(DG408LE) Room Q Charge Injection (DG409LE) CL =1 nF, VGen=6V, Rgen=022 -11 Room 10 Off isoation e, h(DG408LE) OIRR Room -99 Off Isolation n (DG409LE Room 87 Crosstalk e ( DG408LE f= 100 KHZ, RL= 50 Q2 Room -98 Crosstalk e①DG409LE XTALK Room 109 Source Off Capacitance e DG408LE Room 55 Source Off Capacitance e Soff f=1 MHZ, Vs=0V, VEN=0V DG409LE Room 5.5 Drain Off Capacitance e (DG408LE Room Drain Off Capacitance CDfoff) f=1 MHZ, VD=2.4V, VEN=0V Room 13.5 DG409LE Drain On Capacitance f= 1 MHZ, VD=0V, VEN=2.4V Room 35 (DG408LE C Drain On capacitance° (DG409LE only) Room 23.5 (DG409LE Power Supplies Power Supply Range 十 3 Power Supply Current VEN=VA-OVor 5V Room 3.5 6 Notes a. Leakage parameters are guaranteed by worst case test condition and not subject to production test b. Room=25C, Full as determined by the operating temperature suffix C. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet d. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing e. Guaranteed by design, not subject to production test f. VIN= input voltage to perform proper function g. ARDs(an)=RoS(on) max -RDS(on min h. Worst case isolation occurs on Channel 4 do to proximity to the drain pin S16-0389-RevA,07-Mar-16 Document number: 78084 Fortechnicalquestionscontactanalogswitchsupportvishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT AreSubjEctToSpeciFicDisclAiMers,SetForThAtwwwvishay.com/doc?91000 VISHAY DG408LE DG409LE www.vishay.com Vishay siliconix SPECIFICATIONS (Dual Supply V+=5V,V-=-5v TEST CONDITIONS D SUFFIX PARAMETER SYMBOL UNLESS OTHERWISE SPECIFIED V+=5V,±10%,V-=-5V TEMP TYP d 40°cto+85°c VEN=0.6V or 2.4 vf MIN. C MAX C Analog Switch Analog Signal Range VANALOG Full Drain-Source D=±3.5V,ls=10 RO 15 On-Resistance DS(on) sequence each switch on Full 0 Roo 1 (off) Switch Off Leakage V+=55,V-=5.5V Full 5 Current a VEN=0V,v=±4.5V,vs=±4.5V Room 1 Doff) Full Channel On Leakage V+=5.5V,V-=-5.5V Room Current a ln)yN=24V,VD=±45V,vs=±45V Full 5 Digital Control Logic High Input voltage Full 24 Logic Low Input voltage Full 0.6 Input Current a VAX= VEN=2.4V or 0.6 V Full Dynamic Characteristics vs1=35MWs3=3500408)Room87 100 Transition Time tTRANS Vs1b-=3.5 V, Vs4b--35 V,(DG409LE see figure 2 Full 120 Break-Before-Make Time opeN Vs(all =VDA =3.5V Room 84 see fiqure 4 Ful Room 58 Enable Turn-On Time NENI VAX =0V, Vs1=3.5V(DG408LE) Full VAX=0V, Slb=3.5V(DG409LE Enable Turn-Off Time see figure 3 Room 3 OFF(EN) Full Source Off Capacitance DG408LE Room Soff) f=1 MHZ, Vs =0V, VEN=0V Source off capacitance e DG409L日 5.5 Drain Off Capacitance e Room 26 (DG408LE f= 1 MHZ, Vd=0V, VEn=0 V F Drain Off Capacitance e DG409LE Room 14 Drain On Capacitance e (DG408LE) Room 36 f=1 MHz, VD=0V, Ven= 2.4 V Drain On capacitance e Room 24 (DG409LE Notes a. Leakage parameters are guaranteed by worst case test condition and not subject to production test b. Room =25C, full =as determined by the operating temperature suffix. C. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this datasheet d. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing e. Guaranteed by design, not subject to production test f. Vin= input voltage to perform proper function g. ARDS(an)=RDS(on) max- Rps(on)min h. Worst case isolation occurs on channel 4 do to proximity to the drain pin S16-0389-RevA,07-Mar-16 Document number: 78084 Fortechnicalquestionscontactanalogswitchsupportvishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARESUBJECTTOSPECIFICDISCLAIMERS,SETFORTHATwww.com/doc?91000 VISHAY DG408LE DG409LE www.vishay.com Vishay siliconix SPECIFICATIONS (Single Supply 5 W TEST CONDITIONS D SUFFIX 40°to+85 PARAMETER SYMBOL/ UNLESS OTHERWISE SPECIFIED v+=5V,±10%,V-=0V TEMP. b TYP. d UNIT VEn=0.6 V or 2.4Vf MIN. c MAX Analog Switch Analog Signal Range e ANALOG Full Drain-source V+=4.5V, Vp or vs =1 V or 3.5V, Room 28 On-Resistance Is=5 mA Ful 41 RDS(on) Matching Between Channels g V+=4.5V, Vo=1V or 3.5 V, Room 3 On-Resistance flatness RFLATion Is= 5 mA Room Room Switch Off Leakage V+=5.5v, vs=1 V or 4V Full Current a Vo=4Vor 1V Ro oom 1 Full 5 Channel On Leakage V+-5.5V, VD=Vs-1Vor 4 V Room Current a sequence each switch on Full 5 5 Digital Control Logic High Input Voltage Vin Full 2.4 V+=5∨ Logic Low Input Voltage V Full 0.6 Input Current a VAX= VEn= 2.4V or 0.6 V Full Dynamic Characteristics Vs1=3.5V,Vs8=0V,(DG408LE) Ro oom 113 135 Transition Time tTRANs Vs1b=3.5V, Vs4b-0V, ( DG409LE see tigure 2 Full 165 Break-Before-Make Time S(all=VDA=3.5V, Room 75 OPEN see figure 4 Full Room 77 89 Enable turn-On Time tONEN) VAX=0V, Vs,=3.5V(DG408LE VAX=0V,Vs1b=3.5V(DG409LE) Full 110 Enable Turn-Off Time see figure 3 Room 43 50 toFF(EN) Full 53 Charge Injection( DG408LE RO OOIT CL=1 nF, RGEn=0 Q2, VGEn=2.5v Charge Injection(DG409LE Room Off Isolation, h(DG408LE) OIRR oom 100 Off Isolation e, h(DG409LE Room 83 f=100kHz,RL=509 Crosstalk (DG408LE Room -101 Crosstalk DG409LE Ro oom -108 Source Off Capacitance c (DG408LE Room 6.5 Source off Capacitance e Csioff f= 1 MHZ, Vs=0V,VEN=0V ( DG409LE Room 6.5 Drain Off Capacitance DG408LE 30 Drain Off Capacitance e f= 1 MHz, Vd=0V, ven=0V F Room 16 (DG409LE Drain On capacitance e 0G408 Room 40 Drain On Capacitance e f= 1 MHz, VD=0V, VEN=2.4V Room 26.5 (DG409LE a. Leakage parameters are guaranteed by worst case test condition and not subject to production test b. Room=25C, full as determined by the operating temperature suffix. C. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum is used in this data sheet. d. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing e. Guaranteed by design, not subject to production test f. Vin= input voltage to perform proper function g. ARDS(on)= Rps(on) max -RDS(on) min h. Worst case isolation occurs on channel 4 do to proximity to the drain pin S16-0389-RevA,07-Mar-16 Document number: 78084 Fortechnicalquestionscontactanalogswitchsupportvishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS SET FORTH AT wWW nay com/doc?91000 VISHAY DG408LE DG409LE www.vishay.com Vishay siliconix SPECIFICATIONS (Single Supply 3 W TEST CONDITIONS D SUFFIX SYMBOL/UNLESS OTHERWISE SPECIFIED TEMP. bTYP d -40°cto+85°c PARAMETER v+=3V,±10%,V=0V UNIT VEN=0.4 or 2V f MIN. c MAX C Analog Switch Analog Signal Range e ANALOG Full 0 V Drain-Source V+=2.7V,V=0.5or2.2V Room 63 80 On-Resistance Is =5 mA Full Room Scoff) Switch Off Leakage Full 5 5 Current a V+=3.3V,Vs=2or 1V, Vd=1 ar2V Room D(off) Full Channel On Leakage V+=3.3V, Vo=Vs=1Vor 2 V Room Current a sequence each switch on Full 5 Digital Control Logic High Input Voltage V Ful 2 V Logic Low Input Voltage Full 0.4 Input Current a VAX= Ven=2. 4v or 0.4V Full Dynamic Characteristics s1=15V,vs8=0V,(DG408LE) Room 211 275 Transition Time TRANS sIb=1.5 V, Vs4b=0 V, DG409LE see figure 2 Full 300 Vs(all=VDA=1.5V, Room 209 Break-Before-Make Time PEN see figure 4 Full Room 125 150 Enable Turn-On Time VAX=0V, Vs1=1.5V(DG408LE Full 180 VAX=0V, Vs1b=1.5V(DG409LE) Enable Turn-Off Time toFFEN see figure 3 Room 45 75 Full 95 Charge injection (DG408LE Room 0 Q CL=1 nF, RGen=0 Q2, VGen=1.5 V C charge injection (DG409LE Room 04 Off Isolation e,n(DG408LE Room 90 OIRR Off Isolation e,n(DG409LE Room dB Crosstalk e(DG408LE f= 100 kHz, RL=50Q2 Room 95 XTALK Crosstalk e ( DG409LE Room 93 Source Off Capacitance e R G408L三 7 Source Off Capacitance e S(ott) f= 1 MHz, Vs=0V, Ven=0V (DG409LE Room 7 Drain Off Capacitance e DG408LE Room 33 Drain Off Capacitance f=1 MHZ, VD=0V, VEN=0V Room 18 DG409LE Drain On capacitance e 43 G408LE Room Drain on Capacitance e f= 1 MHZ, VD=OV, VEN=2 V (DG409LE Room 28 Notes a. Leakage parameters are guaranteed by worst case test condition and not subject to production test b. Room=25C, full as determined by the operating temperature suffix d.Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing Ve a maximum, is used in this data sheet e. Guaranteed by design, not subject to production test f. ViN= input voltage to perform proper function g. ARDS(an )=Rps(on) max -RpS(on) min h. Worst case isolation occurs on channel 4 do to proximity to the drain pin S16-0389-RevA,07-Mar-16 Document number: 78084 Fortechnicalquestionscontactanalogswitchsupportvishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT WWW nay com/doc?91000 VISHAY DG408LE DG409LE www.vishay.com Vishay siliconix TYPICAL CHARACTERISTICS(25C, unless otherwise noted) 3.3V 45 V+=5V V+=12V VD-Drain Voltage (M V,-Drain Voltage ( RDS(on)VS VD and Power Supply RDS(on)VS VD and Power Supply V+=5V,V-=-5V 45|V+=5V,V-=0V 25° 85C 25C 10 123456 2 5 VD- Drain Voltage (V) Drain Voltage M RDS(on)VS Vp and Temperature(Dual Supply RDS(on)vS. vo and Temperature 1.8 180 160 1.7 140 1.6 t 120 Upper Threshold Limit 1.5 100 Lower Threshold Limit B80 60 OFF 40 1.2 20 34567891011121314 345678910111 V+- positive Supply Voltage ( V V+- Positive Supply Voltage nput threshold vs. V+ Supply voltage Switching Time vs Supply voltage S16-0389-RevA,07-Mar-16 8 Document number: 78084 Fortechnicalquestionscontactanalogswitchsupportvishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARESUBJECTTOSPECIFICDISCLAIMERS,SETFORTHATwww.com/doc?91000 VISHAY DG408LE DG409LE www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS(25C, unless otherwise noted) 100 Is(off) 5V V+=+/-5V d(on) 10 Id (off) V+=12V 15 20 -5.5-4.5-3.5-2.5-1.5-0.50.51.52.53.54.55.5 5-4-3-2-10123456789101112 D. Vs -Analog Voltage Vs- Source Voltage m Leakage Current VS Analog Voltage Charge Injection VS Analog voltage(DG408LE Insertion LOSS(3 dB= 39 MHz) 5V,V-=0 y+=5V V+=12V Crosstalk V+=+/-5V -70 10 -110 10123456789101112 100 V。- Source voltage Frequency(MHz) Charge Injection vS Analog Voltage(DG409LE Insertion Loss, Off Isolation, and Crosstalk vS Frequency v+=12V,∨-=0V 20 Id (off) 15 Is(off) 0123456789101112 Drain/Source Capacitance vs Analog voltage (DG408L) Drain/Source Capacitance vs Analog voltage DG408Le S16-0389-RevA,07-Mar-16 Document number: 78084 Fortechnicalquestionscontactanalogswitchsupportvishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARESUBJECTTOSPECIFICDISCLAIMERS,SETFORTHATwww.com/doc?91000 VISHAY DG408LE DG409LE www.vishay.com Vishay Siliconix SCHEMATIC DIAGRAM(Typical Channel Voltage Regulator GND Body Level Sh Ive g TEST CIRCUITS A DG408LE SB tr<20 3VOEN 3V GND V 35 pF 0V 300g2 V+ 50% Stb 90% DG409LE 「 TRANS SoN 3 V ON (DG408LE) GND ON (DG409LE) 300g Fig. 2-Transition Time S16-0389-RevA,07-Mar-16 10 Document number: 78084 Fortechnicalquestionscontactanalogswitchsupportvishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS SET FORTH AT wWW nay com/doc?91000

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