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详细说明:富士通公司生产的射频功率放大器,工作频段为L或者S波段FLL120MK
L-Band Medium High Power GaAs FET
j50
+
2
+j100
5.0 GHz
+1250
5.0 GHz
+10
3.5
4.0
20XU5.0GHZ
010.+210—25—509
250
180°
432 1B05GHz
0
SCALE FOR IS21
0.1
02
90
S-PARAMETERS
10V
DS
2200mA
FREQUENCY
S11
S21
s12
S22
(MHZ)
MAG ANG
MAG ANG
MAG
ANG
MAG
ANG
500
959-168.4
3.136
95.8
008
31.0
.824
1794
953-176.0
1.617
.010
45.7
813
178.8
1500
179.6
1.170
93.8
64.3
810
177.7
2000
177.0
978
92.3
.014
82.4
792
176.5
2500
939
172.6
927
91.4
021
778
174.0
914
165.1
936
.024
93.2
739
168.3
152.7
158.9
4000
.836
134.0
1.106
67.1
.051
88.1
.633
145.1
4500
.766
107.3
1.239
48.2
067
77.3
128.0
5000
.690
71.6
1.415
23.9
103
60.5
477
107.3
FUITSU
FLL120MK
L-Band Medium High Power GaAs FET
Case Style"MK
Metal-Ceramic Hermetic Package
2.28±02
1.0±0.1
(0.039)
175±0.2
10689)
1. Gate
2. Source(Flange)
3. Drain
For further information please contact:
FUJITSU COMPOUND SEMICONDUCTOR INC
2355 Zanker Rd
CAUTION
San Jose, Ca 95131-1138,U.SA
Fujitsu Compound Semiconductor Products contain gallium arsenide
Phone:(408)2329500
(GaAs)which can be hazardous to the human body and the environment
For safety, observe the following procedures
FAX:(408)428-9111
www.fcsi.fujitsu.com
Do not put these products into the mouth
Do not alter the form of this product into a gas, powder or liqu
FUJITSU MICROELECTRONICS, LTD
through burning, crushing, or chemical processing as these by-products
are dangerous to the human body if inhaled, ingested or swallowed
Compound Semiconductor Division
Observe government laws and company regulations when discarding th
Network House
product. This product must be discarded in accordance with methods
Norreys Drive
specified by applicable hazardous waste procedures
Maidenhead. Berkshire sl6 4FJ
Phone:+44(0)1628504800
FAX:+44(0)1628504888
Fujitsu Limited reserves the right to change products and specifications without notice
The information does not convey any license under rights of Fujitsu Limited or others
c1998 FUJITSU COMPOUND SEMICONDUCTOR INC
Printed in U.S.A. FCSI0598M200
FUITSU
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