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  1. SEMICONDUCTOR TECHNICAL DAT moc3041使用

  2. The MOC3041, MOC3042 and MOC3043 devices consist of gallium arsenide infrared emitting diodes optically coupled to a monolithic silicon detector performing the function of a Zero Voltage Crossing bilateral triac driver. They are designed for use wit
  3. 所属分类:其它

    • 发布日期:2009-08-08
    • 文件大小:307kb
    • 提供者:ulzengxianqian
  1. 4N29光电耦合datasheet(motorola)

  2. SEMICONDUCTOR TECHNICAL DATA The 4N29/A, 4N30, 4N31, 4N32(1) and 4N33(1) devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon photodarlington detector.
  3. 所属分类:其它

    • 发布日期:2010-03-09
    • 文件大小:287kb
    • 提供者:bernin
  1. minimos os

  2. MINIMOS is a software tool for the numerical simulation of semiconductor fieldeffect transistors. The first version was released over 10 years ago, and since then the code has undergone continuous extensions and improvements, culminating in 1991’s V
  3. 所属分类:嵌入式

  1. VLSI Fabrication Principles, Silicon and Gallium Arsenide

  2. 超大规模集成电路制造技术,同志们,超好的一本当代用书! Summary: Fully updated with the latest technologies, this edition covers the fundamental principles underlying fabrication processes for semiconductor devices along with integrated circuits made from silicon and gallium a
  3. 所属分类:电信

    • 发布日期:2012-01-07
    • 文件大小:38mb
    • 提供者:microangelos
  1. MOC3022英文数据手册

  2. 官方数据文档,The MOC3020 Series consists of gallium arsenide infrared emitting diodes, optically coupled to a silicon bilateral switch.
  3. 所属分类:嵌入式

    • 发布日期:2019-01-16
    • 文件大小:302kb
    • 提供者:u010941464
  1. Terahertz Permittivity of GaAs, SiO2, Pt and Ti

  2. GaAs,SiO2,Pt和Ti的介电系数,王茂琰,李海龙,肖特基二极管通常由半导体、介质、导体和超导体构成。本文简单地综述了构成肖特基二极管的砷化镓(Gallium Arsenide,GaAs),二氧化硅(Sili
  3. 所属分类:其它

    • 发布日期:2019-12-28
    • 文件大小:262kb
    • 提供者:weixin_38559569
  1. FLL120MK.pdf

  2. 富士通公司生产的射频功率放大器,工作频段为L或者S波段FLL120MK L-Band Medium High Power GaAs FET j50 + 2 +j100 5.0 GHz +1250 5.0 GHz +10 3.5 4.0 20XU5.0GHZ 010.+210—25—509 250 180° 432 1B05GHz 0 SCALE FOR IS21 0.1 02 90 S-PARAMETERS 10V DS 2200mA FREQUENCY S11 S21 s12 S22 (MHZ
  3. 所属分类:硬件开发

    • 发布日期:2019-07-07
    • 文件大小:101kb
    • 提供者:weixin_37891954
  1. Roles of cesium and oxides in the processing of gallium aluminum arsenide photocathodes

  2. The roles of cesium (Cs) and oxides in the processing of gallium aluminum arsenide (GaAlAs) photocathodes have been investigated. The Cs/O activation, Cs/O reactivation and degradation experiments are performed on GaAlAs photocathode. The activated p
  3. 所属分类:其它

    • 发布日期:2021-02-09
    • 文件大小:703kb
    • 提供者:weixin_38697444