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  1. The effect of zinc doping on the structural and magnetic properties Fe2O4

  2. The effect of zinc doping on the structural and magnetic properties of Ni1−x Zn x Fe2O4
  3. 所属分类:教育

    • 发布日期:2013-06-21
    • 文件大小:735kb
    • 提供者:u011153746
  1. Computer simulation of the effect of phosphorous doping

  2. Computer simulation of the effect of phosphorous doping
  3. 所属分类:电子政务

    • 发布日期:2014-09-10
    • 文件大小:244kb
    • 提供者:lx_lag123456
  1. In doping and post-treatment effect on holographic properties in In:Ce:Cu:LiNbO3 crystal

  2. In doping and post-treatment effect on holographic properties in In:Ce:Cu:LiNbO3 crystal,张涛,徐玉恒,A series of triply-doped In:Ce:Cu:LiNbO3 crystals with a varying level of In doping were grown by Czochraski technique in air atmosphere, and some samples
  3. 所属分类:其它

    • 发布日期:2020-03-02
    • 文件大小:409kb
    • 提供者:weixin_38734276
  1. Analysis of Dielectric Property and Curie point in Ba0.99(Bi0.5Na0.5)0.01TiO3 Ceramics with BaF2-doping

  2. BaF2掺杂对Ba0.99(Bi0.5Na0.5)0.01TiO3陶瓷介电常数和居里温度的影响,刘明龙,,论文对BaF2掺杂钛酸钡陶瓷的性能进行了研究,通过测量产品的介电常数来分析BaF2掺杂对产品介电性能和居里点移动的影响。随着BaF2掺杂
  3. 所属分类:其它

    • 发布日期:2020-02-17
    • 文件大小:213kb
    • 提供者:weixin_38690275
  1. Influence of Titanium Doping on the Structure and Morphology of MgO prepared by Coprecipitation Method

  2. Influence of Titanium Doping on the Structure and Morphology of MgO prepared by Coprecipitation Method,王维,乔学亮,Ti-doped magnesium oxide powders were prepared by a chemical coprecipitation technique using magnesium nitrate hexahydrate and titanium tetr
  3. 所属分类:其它

    • 发布日期:2020-02-05
    • 文件大小:963kb
    • 提供者:weixin_38751014
  1. La Doping of CdS for Enhanced CdS/CdSe Quantum Dot Cosensitized Solar Cells

  2. La Doping of CdS for Enhanced CdS/CdSe Quantum Dot Cosensitized Solar Cells
  3. 所属分类:其它

  1. Effect of Al doping on the reliability of HfO2 as a trapping layer: First-principles study

  2. Effect of Al doping on the reliability of HfO2 as a trapping layer: First-principles study
  3. 所属分类:其它

    • 发布日期:2021-02-22
    • 文件大小:436kb
    • 提供者:weixin_38720050
  1. Trapping analysis and countermeasure for arsenic auto-doping in 40-nm epitaxial diode arrays and CMOS integration

  2. In this work, a methodology to analyze trapping mechanism of As auto-doping has been presented in the epitaxial.diode array and CMOS integration. With a temperature-pressure optimization in three-step silicon epitaxial.growth being proposed, As trapp
  3. 所属分类:其它

  1. Improved efficiency of blue phosphorescence organic light-emitting diodes with irregular stepwise-doping emitting layers

  2. Improved efficiency of blue phosphorescence organic light-emitting diodes with irregular stepwise-doping emitting layers
  3. 所属分类:其它

    • 发布日期:2021-02-21
    • 文件大小:456kb
    • 提供者:weixin_38741075
  1. Cr-doping induced ferromagnetic behavior in antiferromagnetic EuTiO"3 nanoparticles

  2. We have synthesized a series of high quality EuTi(1-x)Cr(x)O(3) ( x = 0.0, 0.02, and 0.04) nanoparticles by simple sol-gel technique. The averaged grain size of these obtained nanoparticles displays no obvious change with Cr-doping and is about 100 n
  3. 所属分类:其它

    • 发布日期:2021-02-21
    • 文件大小:542kb
    • 提供者:weixin_38631454
  1. Impact of Nitrogen Doping on Electrical Conduction in Anatase TiO2 Thin Films

  2. Impact of Nitrogen Doping on Electrical Conduction in Anatase TiO2 Thin Films
  3. 所属分类:其它

    • 发布日期:2021-02-21
    • 文件大小:710kb
    • 提供者:weixin_38547882
  1. Influence of Si doping on the structural and optical properties of InGaN epilayers

  2. Influence of Si doping on the structural and optical properties of InGaN epilayers
  3. 所属分类:其它

    • 发布日期:2021-02-20
    • 文件大小:384kb
    • 提供者:weixin_38501810
  1. Rare-earth doping, various post-growth heat treatments and aging effects on OH− absorption in LiNbO3 crystal

  2. Rare-earth doping, various post-growth heat treatments and aging effects on OH− absorption in LiNbO3 crystal
  3. 所属分类:其它

  1. High quantum efficiency of depth grade doping negative-electron-affinity GaN photocathode

  2. High quantum efficiency of depth grade doping negative-electron-affinity GaN photocathode
  3. 所属分类:其它

    • 发布日期:2021-02-20
    • 文件大小:762kb
    • 提供者:weixin_38723527
  1. Enhanced nonlinearity in photonic crystal fiber by germanium doping in the core region

  2. Germanium doping in silica can be used as a method for nonlinearity enhancement. Properties of the enhanced nonlinearity in photonic crystal fiber (PCF) with a GeO2-doped core are investigated theoretically by using all-vector finite element method.
  3. 所属分类:其它

    • 发布日期:2021-02-13
    • 文件大小:479kb
    • 提供者:weixin_38583286
  1. Room-temperature plasma doping without bias power for introduction of Fe, Au, Al, Ga, Sn and In into Si

  2. Room-temperature plasma doping without bias power for introduction of Fe, Au, Al, Ga, Sn and In into Si
  3. 所属分类:其它

  1. Resolution characteristics of graded doping and graded composition transmission-mode AlGaAs/GaAs photocathodes

  2. Resolution characteristics of graded doping and graded composition transmission-mode AlGaAs/GaAs photocathodes
  3. 所属分类:其它

    • 发布日期:2021-02-10
    • 文件大小:511kb
    • 提供者:weixin_38653878
  1. The High Quantum Efficiency of Exponential-Doping AlGaAs/GaAs Photocathodes Grown by Metalorganic Chemical Vapor Deposit

  2. The High Quantum Efficiency of Exponential-Doping AlGaAs/GaAs Photocathodes Grown by Metalorganic Chemical Vapor Deposition
  3. 所属分类:其它

    • 发布日期:2021-02-10
    • 文件大小:617kb
    • 提供者:weixin_38659311
  1. Improved efficiency of InAs/GaAs quantum dots solar cells by Si-doping

  2. This paper reports on significantly improved efficiency of InAs/GaAs quantum dot (QD) solar cells by directly doping Si into InAs QDs during the QD growth. The devices which contain five stacked QDs in their i-regions were grown using molecular beam
  3. 所属分类:其它

    • 发布日期:2021-02-10
    • 文件大小:379kb
    • 提供者:weixin_38725137
  1. Enhancement of upconversion luminescence of YAlO3: Er3+ by Gd3+ doping

  2. The upconversion luminescences of YAlO3:Er3+ phosphor co-doping with different Gd3+ concentrations are investigated under the excitation of 980- and 532-nm diode lasers. A near ultraviolet upconversion emission at 410 nm is observed in YAlO3 under 53
  3. 所属分类:其它

    • 发布日期:2021-02-09
    • 文件大小:538kb
    • 提供者:weixin_38722052
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