22 Nonlinear RF and Microwave Circuit Analysis Michael B. Steer and John F. Sevic 22.1 Introduction ..........................................................................................................................22-1 22.2 Modeling RF and M
Broadband Microwave AmplifiersForeword ixPreface xiOrganization of This Book xiiAcknowledgments xvCHAPTER 1Overview of Broadband Amplifiers 11.1 Historical Perspective on Microwave Amplifiers 11.2 Broadband Amplifiers 31.3 Review of Various Broadban
The small signal equivalent circuit of SiC MESFETs has been studied and the parasitic and intrinsic elements have been extracted with both numerical and analytical methods. The trapping-emission mechanism is discussed in detail. The proposed model is
A comprehensive model to accurately and simply describe the trapping property and its influence on device frequency characteristics is proposed for SiC MESFET. DC performance is simulated and trap parameters are extracted. Both positive and negative
