——即将腾飞的新一代半导体技术 Silicon Carbide Semicondutor Technology: ——A new generation of semiconductors is about to take off 电源设计者们仿佛正在目睹一个新的半导体技术的诞生。随之而来的新一代功率半导体器件远远优于现有的硅技术。SiC材料可以让器件具有迄今为止设计工程师们梦寐以求却不能得到的出色特性。其最重要的优点包括以下几个方面： ● 工作结温高达225℃，而相应的漏电流只有适度的增加。由
We investigated the magnetotransport properties of a bilayer graphene Hall bar sample epitaxially grown on Si-terminated silicon carbide. Integer quantum Hall effect and weak localization effect were observed. From the weak localization effect, the c
Cubic silicon carbide (SiC) nanowires are synthesized in a catalyst-assisted process. The nanowires with diameter of ~40 nm exhibit strong blue light emission at room temperature under ultraviolet (UV) femtosecond laser excitation. The photon energy
Laser additive manufacturing (LAM) of tungsten carbide metal matrix composites (MMCs) has been evaluated for surface modification of hot die forming tools,cutting edges,glass tooling,extrusion mandrels,and other abrasive wear applications. This work
A cubic silicon carbide (3C-SiC) photoconductive semiconductor switch was fabricated from polycrystalline 3C-SiC. The switch had a dark resistivity of 106 Qcm. The ratio of off-resistance to on-resistance of the switch was up to 105. The switch showe
Study of influence of the removal depth of the silicon modification layer on grating structures in reaction-sintered silicon carbide substrate and improvement method
A dual-wavelength fiber laser operating at the 1550 nm region using a side-polished arc-shaped fiber with deposited ZnO nanoparticles is proposed and demonstrated. The arc-polished fiber is fabricated by using a simple but novel approach in which a s
Demand for large-scale off-axis aspherical mirrors is increasing in next-generation space-borne optical imaging systems. In this paper, a variable-axis single-point grinding strategy is developed for precisely, cost-effectively figuring silicon carbi
In order to obtain precise optical free-form convex mirror, we present a perfect process specification for fabricating and testing optical free-form convex mirror. Some technical requirements of 84×84 (mm) optical free-form convex silicon carbide (Si
Silicon carbide (SiC) is a wide bandgap semiconductor which exhibits outstanding mechanical, chemical properties, and potential for a wide range of applications. Laser technology is being established as an -indispensable powerful tool to induce struc
Zirconium carbide (ZrC) with layered structure and nanoparticle morphology was prepared by sonication in an ethyl alcohol solvent. The morphology and saturable absorption properties of the ZrC were systematically analyzed. By using ZrC nanoparticle c
