The MOC3041, MOC3042 and MOC3043 devices consist of gallium arsenide infrared emitting diodes optically coupled to a monolithic silicon detector performing the function of a Zero Voltage Crossing bilateral triac driver. They are designed for use wit
SEMICONDUCTOR TECHNICAL DATA The 4N29/A, 4N30, 4N31, 4N32(1) and 4N33(1) devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon photodarlington detector.
MINIMOS is a software tool for the numerical simulation of semiconductor fieldeffect transistors. The first version was released over 10 years ago, and since then the code has undergone continuous extensions and improvements, culminating in 1991’s V
超大规模集成电路制造技术，同志们，超好的一本当代用书！ Summary: Fully updated with the latest technologies, this edition covers the fundamental principles underlying fabrication processes for semiconductor devices along with integrated circuits made from silicon and gallium a
The RF3826 is a wideband Power Amplifier designed for CW and pulsed applications such as wireless infrastructure, RADAR, two way radios and general purpose amplification. Using an advanced high power density Gallium Nitride (GaN) semiconductor proce
This thesis reviews the characteristics and commercial status of both vertical and lateral GaN power devices from the user perspective, providing the background necessary to understand the significance of these recent developments.
电路学 - 基础电路里面的元器件介绍以其例子，适合新手Semiconductor - I
Silicon is the most common material used to build semiconductor devices
Si is the main ingredient of sand and it is estimated that a cubic mile of seawater
contains 15.000 tons of si
Si is spun and grown i
The roles of cesium (Cs) and oxides in the processing of gallium aluminum arsenide (GaAlAs) photocathodes have been investigated. The Cs/O activation, Cs/O reactivation and degradation experiments are performed on GaAlAs photocathode. The activated p
beta-Ga2O3 versus epsilon-Ga2O3: Control of the crystal phase composition of gallium oxide thin film prepared by metal-organic chemical vapor deposition
We introduce a nanoscale photonic platform based on gallium phosphide. Owing to the favorable material properties, peak power intensity levels of 50 GW/cm2 are safely reached in a suspended membrane. Consequently, the field enhancement is exploited t
